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ZXMHC10A07T8
P-Channel
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V (BR)DSS
I DSS
I GSS
-100
-1.0
100
V
A
nA
I D = -250 A, V GS =0V
V DS = -100V, V GS =0V
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
V GS(th)
R DS(on)
g fs
-2.0
1.2
-4.0
1
1.45
V
S
I D = -250 A, V DS =V GS
V GS = -10V, I D = - 0.6A
V GS = -6V, I D = -0.5A
V DS = -15V, I D = -0.6A
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
141
13.1
10.8
pF
pF
pF
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
1.6
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
t r
t d(off)
t f
Q g
2.1
5.9
3.3
1.6
ns
ns
ns
nC
V DD = -50V, I D = -1A
R G ? 6.0 , V GS = -10V
V DS = -50V, V GS = -5V
I D = -0.6A
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Q g
Q gs
Q gd
3.5
0.6
1.6
nC
nC
nC
V DS = -50V, V GS = -10V
I D = -0.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.85
-0.95
V
T j =25°C, I S = -0.75A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
29
31
ns
nC
T j =25°C, I S = -0.9A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2005
5
SEMICONDUCTORS
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